elektronische bauelemente SDG5521C n-ch: 5a, 20v, r ds(on) 58 m ? p-ch: -4.7a, -20v, r ds(on) 77 m ? n & p-ch enhancement mode power mosfet 03-may-2013 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features low r ds(on) provides higher efficiency and extends battery lif e. low thermal impedance copper leadframe dfn2*3 saves board space. fast switching speed. high performance trench technology. package information package mpq leader size dfn2*3 3k 13 inch absolute maximum ratings (t a =25 c unless otherwise specified) rating parameter symbol n-ch p-ch unit drain-source voltage v ds 20 -20 v gate-source voltage v gs 8 8 v t a = 25c 5 -4.7 a continuous drain current 1 t a = 70c i d 4.1 -3.9 a pulsed drain current 2 i dm 8 -8 a continuous source current (diode conduction) 1 i s 4.5 -4.5 a t a = 25c 2.1 w total power dissipation 1 t a = 70c p d 1.3 w operating junction & storage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings t Q 10 sec 62.5 c / w maximum junction-to-ambient 1 steady state r ja 80 c / w notes: 1 surface mounted on 1 x 1 fr4 board. 2 pulse width limited by maximum junction temperatu re. dfn2*3 millimeter millimeter ref. min. max. ref. min. max. a 3.00 bsc. f 0.24 0.35 b 1.70 bsc. g 2.00 bsc. c 0.70 0.90 h 0.20 0.40 d 0.65 bsc. i 0 0.15 e 0.08 0.25 top view
elektronische bauelemente SDG5521C n-ch: 5a, 20v, r ds(on) 58 m ? p-ch: -4.7a, -20v, r ds(on) 77 m ? n & p-ch enhancement mode power mosfet 03-may-2013 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol ch min. typ. max. unit teat conditions static n 1 - - v ds =v gs , i d =250 a gate threshold voltage v gs(th) p -1 - - v v ds =v gs , i d = -250 a n - - 100 v ds =0, v gs =8v gate-body leakage i gss p - - -100 a v ds =0, v gs = -8v n - - 1 v ds =16v, v gs =0 p - - -1 v ds = -16v, v gs =0 n - - 10 v ds =16v, v gs =0, t j =55c zero gate voltage drain current i dss p - - -10 a v ds = -16v, v gs =0, t j =55c n 5 - - v ds =5v, v gs =4.5v on-state drain current 1 i d(on) p -5 - - a v ds = -5v, v gs = -4.5v - - 58 v gs =4.5v, i d =1a n - - 64 v gs =2.5v, i d =1a - - 77 v gs = -4.5v, i d = -1a drain-source on-resistance 1 r ds(on) p - - 85 m v gs = -2.5v, i d = -1a n - 10 v ds =5v, i d =1a forward tranconductance 1 g fs p - 5 s v ds = -5v, i d = -1a n - 0.8 - v gs =0, i s =1a diode forward voltage 1 v sd p - -0.83 - v v gs =0, i s = -1a dynamic 2 n - 2 - total gate charge q g p - 7 - n - 0.4 - gate-source charge q gs p - 1 - n - 0.7 - gate-drain charge q gd p - 2 - nc n-channel i d =1a, v ds =15v, v gs =4.5v p-channel i d = -1a, v ds = -15v, v gs = -4.5v n - 6 - turn-on delay time t d(on) p - 10 - n - 9 - rise time t r p - 1 - n - 5 - turn-off delay time t d(off) p - 11 - n - 16 - fall time t f p - 12 - ns n-channel v dd =15v, v gen =4.5v i d =1a, r gen =15 p-channel v dd = -15v, v gen = -4.5v i d =1a, r gen =15 notes: 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
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